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吕红亮 编 / 电子工业出版社 / 2012-09 / 平装
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上书时间2024-04-13
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微电子专业英语
本书以英文的形式介绍了微电子学和集成电路设计的相关技术。全书共分四部分:第一部分为半导体物理基础知识,包括晶格结构、能带结构、载流子浓度和输运等;第二部分介绍半导体器件物理基础理论,包括pn结、肖特基二极管、异质结二极管、双极型晶体管和场效应晶体管;第三部分简要阐述半导体集成电路的设计过程和设计方法;第四部分介绍
半导体集成电路的制造工艺。
本书可作为高等学校微电子学、集成电路设计及相关专业的“专业英语”课程的教材,也可作为从事微电子和集成电路相关科研和工程技术人员的参考书。
目录Session1IntroductiontoSemiconductor1.1WhatisSemiconductor1.2ClassificationofSemiconductorReadingMaterialsSession2CrystalStructure2.1PrimitiveCellandCrystalPlane2.2AtomicBondingReadingMaterialsSession3BandModel3.1IntroductiontoQuantumMechanics3.2Band3.3EffectiveMassTheoryReadingMaterialsSession4TheSemiconductorinEquilibrium4.1ChargeCarriersinSemiconductor4.2IntrinsicSemiconductor4.3ExtrinsicSemiconductorReadingMaterialsSession5CarrierTransport5.1OverviewofCarrierTransport5.2LowFieldTransport5.3HighFieldTransport5.4DiffusionCurrentSession6NonequilibriumExcessCarriersinSemiconductor6.1Recombination6.2MinorityCarrierLifetime6.3AmbipolarTransportReadingMaterialsSession7ThepnJunction(Ⅰ)7.1Introduction7.2BasicStructureofthepnJunction7.3EnergyBandsforapnJunction7.4IdealCurrentVoltageRelationship7.5CharacteristicsofaPracticalDiodeReadingMaterialsSession8ThepnJunction(Ⅱ)8.1BreakdowninpnJunction8.2SmallSignalDiffusionResistanceofthepnJunction8.3JunctionCapacitance8.4DiffusionorStorageCapacitance8.5DiodeTransients8.6CircuitModelsforJunctionDiodesReadingMaterialsSession9MetalSemiconductorContacts9.1SchottkyContacts9.2OhmicContactsReadingMaterialsSession10Heterojunctions10.1StrainandStressatHeterointerfaces10.2HeterojunctionMaterials10.3EnergyBandDiagramsReadingMaterials.Session11TheBipolarJunctionTransistor(Ⅰ)11.1TheBipolarJunctionTransistorConstruction11.2TransistorAction11.3NonidealEffects11.4BaseResistanceReadingMaterialsSession12TheBipolarJunctionTransistor(Ⅱ)12.1BreakdownVoltage12.2FrequencyLimitsofBJT12.3TheSchottkyClampedTransistor12.4SmallsignalTransistorModelReadingMaterialsSession13BasicsofMOSFETs13.1Introduction13.2GeneralCharacteristicsofaMOSFET13.3MOSSystem13.4WorkFunctionDifferences13.5FlatBandVoltage13.6ThresholdVoltageReadingMaterialsSession14NonidealEffectsofMOSFETs14.1Introduction14.2EffectiveMobility14.3VelocitySaturation14.4ChannellengthModulation14.5DIBL14.6HotcarrierEffect14.7GIDLReadingMaterialsSession15AdvancedMOSFETDevices15.1Introduction15.2ChannelDopingProfile15.3GateStack15.4Source/DrainDesign15.5SchottkyBarrierSource/Drain15.6RaisedSource/Drain15.7SOI15.8ThreeDimensionalStructureReadingMaterialsSession16IntroductiontoIntegratedCircuits16.1Introduction16.2SizeandComplexityofIntegratedCircuits16.3SemiconductorDeviceforIntegratedCircuits16.4ICDesignProcessReadingMaterialsSession17AnalogIntegratedCircuitsDesign17.1Introduction17.2AnalogSignalProcessing17.3CMOSTechnology17.4Amplifiers17.5DifferentialAmplifiers17.6OperationalAmplifiers17.7CharacterizationofOpAmpsReadingMaterialsSession18DigitalIntegratedCircuitsDesign18.1Introduction18.2TheStaticCMOSInverter18.3DesigningCombinationalLogicGatesinCMOSReadingMaterialsSession19RadioFrequencyIntegratedCircuitsDesign19.1Introduction19.2RFSystemPerformanceMetrics19.3RFTransceiverArchitectures19.4RFPassiveComponent
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开播时间:09月02日 10:30